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Same model may have multiple batches, images only for reference.
HAT2174H-EL Real Image
Same model may have multiple batches, images only for reference.

HAT2174H-EL

Part No HAT2174H-EL
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 20A 5LFPAK
Datasheet
HAT2174H-EL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Max Gate Charge 33.5nC @ 10V
Max Input Capacitance 2280pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 20W (Tc)
Maximum Rds On at Id,Vgs 27 mOhm @ 10A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 067807-HAT2174H-EL
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian HAT2174H-EL CAD Model

Description

The Renesas Electronics America HAT2174H-EL is a medium popularity electronic component that has limited supply and demand status. This component is designed for use in electronic devices that require a MOSFET technology with N-channel polarity.

  • Power Dissipation: 20W (Tc)
  • Maximum Gate-Source Voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6320 $65.2800
90+ $1.3398 $120.5820
135+ $1.2982 $175.2570
185+ $1.2555 $232.2675
240+ $1.2139 $291.3360
320+ $1.0880 $348.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 41,823 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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