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Same model may have multiple batches, images only for reference.
HAT2266H Renesas Electronics America
Same model may have multiple batches, images only for reference.

HAT2266H

Part No HAT2266H
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 30A LFPAK
Datasheet
HAT2266H Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 25nC @ 4.5V
Max Input Capacitance 3600pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 23W (Tc)
Maximum Rds On at Id,Vgs 12 mOhm @ 15A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 204576-HAT2266H
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian HAT2266H CAD Model

Description

The supply and demand status of this product is limited. It is a highly efficient transistor.

  • Maximum Power Dissipation: 23W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Maximum Drain-Source Breakdown Voltage: 60V

This transistor is ideal for use in various electronic applications.

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