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Same model may have multiple batches, images only for reference.
NE651R479A-T1-A Real Image
Same model may have multiple batches, images only for reference.

NE651R479A-T1-A

Part No NE651R479A-T1-A
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL 8V 1A GAAS HFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
Technology HFET
Frequency 1.9GHz
Gain 12dB
Voltage - Test 3.5 V
Current Rating (Amps) 1A
Current - Test 50 mA
Power - Output 27dBm
Voltage - Rated 8 V
Package / Case 4-SMD, Flat Leads
Supplier Device Package 79A
Standard Package 38 pcs
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 648360-NE651R479A-T1-A
Ultra Librarian 3D Model Ultra Librarian NE651R479A-T1-A CAD Model

Description

The RF FET transistor, part number 648360-NE651R479A-T1-A, is a discrete semiconductor product designed for high-frequency applications.

  • Rated Voltage: 8V
  • Frequency: 1.9GHz
  • Gain: 12dB
  • Power Output: 27dBm
  • Package Type: 4-SMD, flat leads
  • Operating Temperature Range: -40°C to 100°C
  • Status: Obsolete

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11+ $11.0849 $121.9339
17+ $10.7385 $182.5545
23+ $10.3922 $239.0206
29+ $10.0457 $291.3253
39+ $9.0065 $351.2535
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Availability: 5,800 pieces
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