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Same model may have multiple batches, images only for reference.
NE68018-T1-A Real Image
Same model may have multiple batches, images only for reference.

NE68018-T1-A

Part No NE68018-T1-A
Manufacturer Renesas Electronics America
Catalog RF Transistors (BJT)
Description RF TRANS NPN 10V 10GHZ SOT343  /  RF Transistor NPN 10V 35mA 10GHz 150mW Surface Mount SOT-343
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Mfr Renesas
Package Tape & Reel (TR)
Product Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 10V
Frequency - Transition 10GHz
Noise Figure (dB Typ @ f) 1.8dB @ 2GHz
Gain 10.2dB
Power - Max 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 6V
Current - Collector (Ic) (Max) 35mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case SC-82A, SOT-343
Supplier Device Package SOT-343
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.31.0000
Other Names 3923-NE68018-T1-ATR,NE68018-T1-A-ND
Standard Package 3,000
Win Source Part Number 1002882-NE68018-T1-A
Ultra Librarian 3D Model Ultra Librarian NE68018-T1-A CAD Model

Description

The Renesas NE68018-T1-A is a transistor that is designed for bipolar (BJT) - RF applications.

  • Package: Tape and reel
  • Standard Package: 3,000
  • Mounting Technology: SMD (SMT)
  • Power-Max: 150mW
  • Voltage-Collector Emitter Breakdown (Max): 10V
  • Current-Collector (Ic) (Max): 35mA
  • Gain: 10.2dB
  • Transistor Type: NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
  • Frequency-Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
  • Package/Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
  • Temperature Range: 150°C (TJ)
  • ECCN: EAR99
  • Status: Obsolete

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