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Same model may have multiple batches, images only for reference.
NESG2021M16-T3-A
Same model may have multiple batches, images only for reference.

NESG2021M16-T3-A

Part No NESG2021M16-T3-A
Manufacturer Renesas Electronics America
Catalog RF Transistors (BJT)
Description RF SMALL SIGNAL TRANSISTOR
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 5V
Frequency - Transition 25GHz
Noise Figure (dB Typ @ f) 0.9dB ~ 1.3dB @ 2GHz ~ 5.2GHz
Gain 10dB ~ 18dB
Power - Max 175mW
DC Current Gain (hFE) (Min) @ Ic, Vce 130 @ 5mA, 2V
Current - Collector (Ic) (Max) 35mA
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Supplier Device Package M16, 1208
Standard Package 10,000 pcs
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 929100-NESG2021M16-T3-A
Ultra Librarian 3D Model Ultra Librarian NESG2021M16-T3-A CAD Model

Description

The Renesas Electronics America 929100-NESG2021M16-T3-A is a bipolar RF transistor from Renesas Electronics America.

  • Transistor Type: NPN
  • Power (Max): 175mW
  • Collector-Emitter Breakdown Voltage: 5V
  • Collector Current (Max): 35mA
  • DC Current Gain: 130 @ 5mA and 2V
  • Transition Frequency: 25GHz
  • Noise Figure: 0.9dB to 1.3dB @ 2GHz to 5.2GHz
  • Mounting Type: Surface Mount
  • Package: 6-SMD, Flat Leads
  • Lifecycle Status: Obsolete

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