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Same model may have multiple batches, images only for reference.
RN1109CT(TPL3) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1109CT(TPL3)

Part No RN1109CT(TPL3)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.05W CST3
Datasheet
RN1109CT(TPL3) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage 20V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 100 @ 10mA, 5V
Max Vce (sat) 150mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 50mW
Mounting SMD (SMT)
Case / Package CST3
Win Source Part Number 098370-RN1109CT(TPL3)
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 10k pcs
Ultra Librarian 3D Model Ultra Librarian RN1109CT(TPL3) CAD Model

Description

The Toshiba Semiconductor and Storage is a medium-popularity electronic component with sufficient supply and demand status.

  • Win Source Part Number: 098370-RN1109CT(TPL3)
  • Product Type: discrete semiconductor product
  • Transistor Polarity: NPN
  • Transistor: pre-biased
  • Base Resistor: 47k ohms
  • Emitter-Base Resistor: 22k ohms
  • Maximum Collector Current: 50mA
  • Maximum Collector-Emitter Breakdown Voltage: 20V
  • Maximum Power Dissipation: 50mW
  • Collector Cut-off Current: 500nA
  • Typical Gain (hFE): 100 @ 10mA and 5V

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