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Same model may have multiple batches, images only for reference.
NP160N04TUG-E1-AY Renesas Electronics America
Same model may have multiple batches, images only for reference.

NP160N04TUG-E1-AY

Part No NP160N04TUG-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 160A TO-263-7
Datasheet
NP160N04TUG-E1-AY Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 270nC @ 10V
Max Input Capacitance 15750pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta), 220W (Tc)
Maximum Rds On at Id,Vgs 2 mOhm @ 80A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263-7
Dimension TO-263-7, D2Pak (6 Leads + Tab)
Win Source Part Number 1083303-NP160N04TUG-E1-AY
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NP160N04TUG-E1-AY CAD Model

Description

The NP160N04TUG-E1-AY is an N-channel MOSFET with a drain-source breakdown voltage of 40V and a continuous drain current of 160A @ 25°C. It is from Renesas Electronics America.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 160A
  • Power Dissipation: 1.8W (Ta) and 220W (Tc)
  • Package: TO-263-7
  • Maximum Rds On @ Id,Vgs: 2 mOhm @ 80A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Application: Discrete semiconductor products

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