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Same model may have multiple batches, images only for reference.
NP80N04KHE-E1-AY Real Image
Same model may have multiple batches, images only for reference.

NP80N04KHE-E1-AY

Part No NP80N04KHE-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 80A TO263
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3300 pF @ 25 V
Power Dissipation (Max) 1.8W (Ta), 120W (Tc)
Temperature Range - Operating 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 800 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 649315-NP80N04KHE-E1-AY
Ultra Librarian 3D Model Ultra Librarian NP80N04KHE-E1-AY CAD Model

Description

The 649315-NP80N04KHE-E1-AY is a N-Channel MOSFET transistor with a drain to source voltage (Vdss) of 40V.

  • Continuous Drain Current (Id): 80A @ 25°C
  • On-Resistance (Rds On): 8mOhm @ 40A and 10V
  • Gate-Source Voltage (Vgs) Threshold: 4V @ 250µA
  • Mounting Style: Surface Mount
  • Package: TO-263-3
  • Maximum Power Dissipation: 1.8W (Ta) and 120W (Tc)
  • Gate Charge (Qg): 60nC @ 10V
  • Input Capacitance (Ciss): 3300pF @ 25V
  • Operating Temperature: 175°C (TJ)
  • Product Status: Obsolete
  • Manufacturer: Renesas Electronics America

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