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Same model may have multiple batches, images only for reference.
NP80N055MHE-S18-AY Real Image
Same model may have multiple batches, images only for reference.

NP80N055MHE-S18-AY

Part No NP80N055MHE-S18-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A TO-220
Datasheet
NP80N055MHE-S18-AY Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 3600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta), 120W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 40A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 1043207-NP80N055MHE-S18-AY
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Signal Processing, Industrial
Ultra Librarian 3D Model Ultra Librarian NP80N055MHE-S18-AY CAD Model

Description

The Renesas Electronics America NP80N055MHE-S18-AY is a N-channel MOSFET with a drain-source breakdown voltage of 55V and a continuous drain current of 80A (Tc) @ 25°C.

  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 80A (Tc) @ 25°C
  • Power Dissipation: 1.8W (Ta) and 120W (Tc)
  • Drive Voltage: 10V
  • Operating Temperature Range: 175°C (TJ)
  • Package: TO-220-3
  • Maximum Rds On: 11 mOhm @ 40A, 10V

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