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Same model may have multiple batches, images only for reference.
NP82N04NUG-S18-AY Real Image
Same model may have multiple batches, images only for reference.

NP82N04NUG-S18-AY

Part No NP82N04NUG-S18-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 82A TO-262
Datasheet
NP82N04NUG-S18-AY Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 160nC @ 10V
Max Input Capacitance 9750pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta), 143W (Tc)
Maximum Rds On at Id,Vgs 4.2 mOhm @ 41A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1010312-NP82N04NUG-S18-AY
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NP82N04NUG-S18-AY CAD Model

Description

The MOSFET is a through-hole mounted N-channel polarity semiconductor component from Renesas Electronics America.

  • Mounting: Through-Hole
  • Polarity: N-Channel
  • Power Dissipation: 1.8W (Ta) and 143W (Tc)
  • Drive Voltage: 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On @ Id,Vgs: 4.2 mOhm @ 41A, 10V
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 82A (Tc)
  • Maximum Input Capacitance: 9750pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Package: TO-262
  • Category: Discrete Semiconductor Products
  • Supply and Demand Status: Balanced

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