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Same model may have multiple batches, images only for reference.
TPCC8104,LQ(O)
Same model may have multiple batches, images only for reference.

TPCC8104,LQ(O)

Part No TPCC8104,LQ(O)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 30V 20A 8-Pin TSON
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Capacitance 2.26 nF
Continuous Drain Current (ID) 20 A
Drain to Source Voltage (Vdss) 30 V
Fall Time 86 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 2.26 nF
Maximum Operating Temperature 150 °C
Max Power Dissipation 27 W
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 8
Packaging Tape & Reel (TR)
Radiation Hardening No
Rds On Max 8.8 mΩ
Rise Time 7 ns
RoHS Compliant
Win Source Part Number 1100789-TPCC8104,LQ(O)
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TPCC8104,LQ(O) CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a high-performance transistor used in RF applications.

  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 20A
  • Gate to Source Voltage: 20V
  • Rds On Max: 8.8 mΩ
  • RoHS Compliant: Yes
  • Operating Temperatures: Ranging from -55 to 150 °C
  • Packaging: Tape and reel
  • Supply and Demand Status: Shortage

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