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NP82N04PUG-E1-AY

Part No NP82N04PUG-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 40V 82A 3-Pin(2+Tab) TO-263 T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-263-3
Continuous Drain Current (ID) 82 A
Drain to Source Voltage (Vdss) 40 V
Fall Time 13 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 9.75 nF
Maximum Operating Temperature 175 °C
Max Power Dissipation 1.8 W
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Elements 1
Packaging Tape & Reel
Power Dissipation 1.8 W
Rds On Max 3.5 mΩ
Rise Time 102 ns
RoHS Compliant
Turn-Off Delay Time 67 ns
Turn-On Delay Time 39 ns
Win Source Part Number 1082623-NP82N04PUG-E1-AY
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Renesas Electronics America
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian NP82N04PUG-E1-AY CAD Model

Description

The NP82N04PUG-E1-AY is a high-performance MOSFET transistor from Renesas Electronics America.

  • Supply and demand: shortage
  • Package: Tape & Reel
  • Maximum Operating Temperature: 175 °C
  • Minimum Operating Temperature: -55 °C
  • Power Dissipation: 1.8 W
  • Continuous Drain Current: 82 A

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5640 $62.5600
95+ $1.2834 $121.9230
140+ $1.2432 $174.0480
195+ $1.2032 $234.6240
250+ $1.1630 $290.7500
335+ $1.0427 $349.3045
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,400 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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Shipping Information

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