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NP90N06VLG-E1-AY

Part No NP90N06VLG-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 90A TO-252
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 135nC @ 10V
Max Input Capacitance 6900pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.2W (Ta), 105W (Tc)
Maximum Rds On at Id,Vgs 7.8 mOhm @ 45A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1083369-NP90N06VLG-E1-AY
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NP90N06VLG-E1-AY CAD Model

Description

The NP90N06VLG-E1-AY MOSFET from Renesas Electronics America is part of the discrete semiconductor products category.

  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 60V
  • Maximum Continuous Drain Current: 90A (Tc) @ 25°C
  • Maximum Rds On @ Id, Vgs: 7.8 mOhm @ 45A and 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 135nC @ 10V
  • Drive Voltage (max Rds On, min Rds On): 4.5V, 10V
  • Operating Temperature: 175°C (TJ)
  • Package: TO-252
  • Supplied In: Reel of 2500 Pieces
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6817 $58.8595
85+ $1.3802 $117.3170
130+ $1.3363 $173.7190
180+ $1.2936 $232.8480
235+ $1.2509 $293.9615
310+ $1.1215 $347.6650
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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