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Same model may have multiple batches, images only for reference.
R1RW0416DSB-2PR#D1 Real Image
Same model may have multiple batches, images only for reference.

R1RW0416DSB-2PR#D1

Part No R1RW0416DSB-2PR#D1
Manufacturer Renesas Electronics America
Catalog RAM
Description IC SRAM 4MBIT PARALLEL 44TSOP II / SRAM Memory IC 4Mb (256K x 16) Parallel 12 ns 44-TSOP II
Datasheet
R1RW0416DSB-2PR#D1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Memory
Mfr Renesas Electronics America Inc
Package Tray
Memory Type Volatile
Memory Format SRAM
Technology SRAM
Memory Size 4Mb (256K x 16)
Memory Interface Parallel
Write Cycle Time - Word, Page 12ns
Access Time 12 ns
Voltage - Supply 3V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting SMD (SMT)
Package / Case 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package 44-TSOP II
Base Product Number R1RW0416
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041
Standard Package 135
Win Source Part Number 1005805-R1RW0416DSB-2PR#D1
Ultra Librarian 3D Model Ultra Librarian R1RW0416DSB-2PR#D1 CAD Model

Description

The R1RW0416DSB-2PR#D1 is a 4Mb (256K x 16) volatile SRAM memory that is designed to provide reliable and efficient performance in various electronic applications manufactured by Renesas.

  • Access Time: 12ns
  • Voltage Supply: 3V ~ 3.6V
  • Mounting: Surface Mount Device (SMD)
  • Package/Case: 44-TSOP (0.400", 10.16mm Width)

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