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Same model may have multiple batches, images only for reference.
RJH60D5DPK-00#T0 Real Image
Same model may have multiple batches, images only for reference.

RJH60D5DPK-00#T0

Part No RJH60D5DPK-00#T0
Manufacturer Renesas Electronics America
Catalog IGBTs - Single
Description IGBT 600V 75A 200W TO3P / IGBT Trench 600 V 75 A 200 W Through Hole TO-3P
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Renesas Electronics America Inc
Package Tube
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 75 A
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 37A
Power - Max 200 W
Switching Energy 650µJ (on), 400µJ (off)
Input Type Standard
Gate Charge 78 nC
Td (on/off) @ 25°C 50ns/135ns
Test Condition 300V, 37A, 5Ohm, 15V
Reverse Recovery Time (trr) 100 ns
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-3P
Base Product Number RJH60D5
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1
Win Source Part Number 1088444-RJH60D5DPK-00#T0
Ultra Librarian 3D Model Ultra Librarian RJH60D5DPK-00#T0 CAD Model

Description

The Renesas Electronics America Inc electronic component is a high-performance IGBT transistor with the Win Source Part Number of 1088444-RJH60D5DPK-00#T0.

  • Power: 200W (Maximum)
  • IGBT Type: Trench
  • Voltage Collector Emitter Breakdown: 600V
  • Current Collector: 75A
  • Switching Energy: 650µJ (on) and 400µJ (off)
  • Gate Charge: 78 nC
  • Package: TO-220-3 Full Pack package
  • Temperature Range: 150°C (TJ)

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