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Same model may have multiple batches, images only for reference.
RJH60F5DPK-00#T0 Renesas Electronics America
Same model may have multiple batches, images only for reference.

RJH60F5DPK-00#T0

Part No RJH60F5DPK-00#T0
Manufacturer Renesas Electronics America
Catalog IGBTs - Single
Description IGBT 600V 80A 260.4W TO-3P / Trans IGBT Chip N-CH 600V 80A 260400mW 3-Pin(3+Tab) TO-3P
Datasheet
RJH60F5DPK-00#T0 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 80A
Vce(on) (Maximum) @ Vge, Ic 1.8V @ 15V, 40A
Power - Max 260.4W
Input Type Standard
Td (on/off) @ 25°C 53ns/105ns
Test Condition 400V, 30A, 5 Ohm, 15V
Reverse Recovery Time (trr) 140ns
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Package TO-3P-3, SC-65-3
Manufacturer Package TO-3P
Win Source Part Number 793208-RJH60F5DPK-00#T0
Popularity Medium
Supply and Demand Status Limited
Family Name RJH60F5DPK-00
ECCN EAR99
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian RJH60F5DPK-00#T0 CAD Model

Description

The RJH60F5DPK-00#T0 from Renesas Electronics America is a Trench IGBT transistor that has a maximum power of 260.4W.

  • Voltage - Collector Emitter Breakdown (Maximum): 600V
  • Vce(on) (Maximum) @ Vge, Ic: 1.8V @ 15V, 40A
  • Current - Collector (Ic) (Maximum): 80A
  • Reverse Recovery Time (trr): 140ns
  • td (on/off) @ 25°C: 53ns/105ns
  • Package Size: TO-3P-3, SC-65-3
  • Mounting Style: through hole

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