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Same model may have multiple batches, images only for reference.
CY14B101LA-ZS20XI Infineon Technologies
Same model may have multiple batches, images only for reference.

CY14B101LA-ZS20XI

Part No CY14B101LA-ZS20XI
Manufacturer Infineon Technologies
Catalog Memory
Description IC NVSRAM 1MBIT PAR 44TSOP II
Datasheet
CY14B101LA-ZS20XI Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs) - Memory - Memory
Mfr Infineon Technologies
Series -
Package Tray
Product Status Active
Memory Type Non-Volatile
Memory Format NVSRAM
Technology NVSRAM (Non-Volatile SRAM)
Memory Size 1Mbit
Memory Organization 128K x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 20ns
Access Time 20 ns
Voltage - Supply 2.7V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package 44-TSOP II
Base Product Number CY14B101
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.32.0041
Win Source Part Number 1378213-CY14B101LA-ZS20XI
Ultra Librarian 3D Model Ultra Librarian CY14B101LA-ZS20XI CAD Model

Description

The CY14B101LA-ZS20XI is a 1Mbit non-volatile SRAM (NVSRAM) integrated circuit (IC) from Infineon Technologies. It operates in a voltage range of 2.7V to 3.6V and has a memory organization of 128K x 8.

  • Mounting Type: Surface mount
  • Package: 44-TSOP II package
  • Write Cycle Time: 20ns
  • Access Time: 20ns
  • Data Storage: Fast and reliable data storage
  • Applications: Suitable for use in various applications such as memory storage in electronic devices
  • Status: An active product
  • REACH: Unaffected by REACH regulations
  • ECCN: EAR99 compliant component

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