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Same model may have multiple batches, images only for reference.
RJK0230DPA-00#J5A Real Image
Same model may have multiple batches, images only for reference.

RJK0230DPA-00#J5A

Part No RJK0230DPA-00#J5A
Manufacturer Renesas Electronics America
Catalog FETs - Arrays
Description POWER FIELD-EFFECT TRANSISTOR
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Renesas Electronics America
Package Bulk
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 20A, 50A
Rds On (Max) @ Id, Vgs 7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1650pF @ 10V
Power - Max 15W, 35W
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Supplier Device Package 8-WPAK-D
Base Product Number RJK0230D
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 295131-RJK0230DPA-00#J5A
Ultra Librarian 3D Model Ultra Librarian RJK0230DPA-00#J5A CAD Model

Description

The RJK0230DPA-00#J5A is a MOSFET transistor designed for use in discrete semiconductor products.

  • Category: Transistors - FETs, MOSFETs, FET, MOSFET Arrays
  • Type: FET, MOSFET Arrays
  • Manufacturer: Renesas Electronics America
  • Type: Logic Level Gate MOSFET
  • Vdss: 25V
  • Id (at 25°C): 20A and 50A
  • Rds On (Max) (at 10A and 10V): 7mOhm
  • Power Dissipation: 15W and 35W
  • Configuration: 2 N-Channel (Half Bridge)
  • Mounting Type: Surface Mount
  • Package Type: 8-PowerVDFN
  • Supplier Device Package: 8-WPAK-D
  • Qg (at max Vgs): 7.7nC @ 4.5V
  • Ciss (at max Vds): 1650pF @ 10V
  • Operating Temperature: 150°C (TJ)
  • ECCN: EAR99

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