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Same model may have multiple batches, images only for reference.
RJK0452DPB-00#J5 Real Image
Same model may have multiple batches, images only for reference.

RJK0452DPB-00#J5

Part No RJK0452DPB-00#J5
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 45A LFPAK / Trans MOSFET N-CH Si 40V 45A 5-Pin(4+Tab) LFPAK T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 40V
Current - Continuous Drain (Id) @ 25°C 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate Charge (Qg) (Maximum) @ Vgs 26nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds 4030pF @ 10V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 55W (Tc)
Rds On (Maximum) @ Id, Vgs 3.5 mOhm @ 22.5A, 10V
Operating Temperature Range 150°C (TJ)
Mounting SMD
Manufacturer Package LFPAK
Package SC-100, SOT-669
Win Source Part Number 793218-RJK0452DPB-00#J5
Popularity Medium
Supply and Demand Status Limited
Family Name RJK0452DPB
Introduction Date July 27, 2010
ECCN EAR99
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian RJK0452DPB-00#J5 CAD Model

Description

The RJK0452DPB-00#J5 from Renesas Electronics America is a MOSFET technology discrete semiconductor product that has a maximum power dissipation of 55W (Tc).

  • Channel Type: N
  • Drain Source Voltage: 40V
  • Gate Charge (Qg): 26nC @ 4.5V
  • Input Capacitance (Ciss): 4030pF @ 10V
  • Vgs (Maximum): ±20V
  • Rds On (Maximum): 3.5 mOhm @ 22.5A, 10V
  • Alternative parts: BUK7Y3R5-40H, PSMN1R8-40YLC, PSMN2R6-40YS,115, PSMN1R8-40YLC,115
  • Supply and Demand Status: limited
  • Estimated EOL Date: 2022

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $52.2268 $104.4536
3+ $42.8528 $128.5584
5+ $41.5130 $207.5650
6+ $40.1744 $241.0464
8+ $38.8357 $310.6856
10+ $34.8175 $348.1750
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Availability: 2,600 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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