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Same model may have multiple batches, images only for reference.
RJK0603DPN-E0#T2 Renesas Electronics America
Same model may have multiple batches, images only for reference.

RJK0603DPN-E0#T2

Part No RJK0603DPN-E0#T2
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 80A TO220
Datasheet
RJK0603DPN-E0#T2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 80A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Gate Charge 57nC @ 10V
Max Input Capacitance 4150pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 5.2 mOhm @ 40A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1092284-RJK0603DPN-E0#T2
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RJK0603DPN-E0#T2 CAD Model

Description

The RJK0603DPN-E0#T2 is an N-channel MOSFET designed for use in discrete semiconductor products manufactured by Renesas Electronics America.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 80A @ 25°C
  • Maximum Rds On: 5.2 mOhm @ 40A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 57nC @ 10V
  • Package: TO-220AB
  • Ideal for: High Power and Efficiency Applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $27.4567 $82.3701
6+ $22.5294 $135.1764
8+ $21.8249 $174.5992
11+ $21.1203 $232.3233
15+ $20.4169 $306.2535
19+ $18.3044 $347.7836
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,800 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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