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TPW2R508NH,L1Q

Part No TPW2R508NH,L1Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description PB-F POWER MOSFET TRANSISTOR DOS
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 150A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6000 pF @ 37.5 V
Power Dissipation (Max) 800mW (Ta), 142W (Tc)
Temperature Range - Operating 150°C
Mounting Type Surface Mount
Supplier Device Package 8-DSOP Advance
Package / Case 8-PowerWDFN
Standard Package 5,000 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 750313-TPW2R508NH,L1Q
Ultra Librarian 3D Model Ultra Librarian TPW2R508NH,L1Q CAD Model

Description

The TPW2R508NH is a N-channel MOSFET transistor designed for high power applications manufactured by Toshiba Semiconductor and Storage.

  • Series: U-MOSVIII-H
  • Package: 8-PowerWDFN
  • Packaging: tape and reel
  • Standard Package: 5,000 pieces
  • Base Product Number: TPW2R508NH
  • Market Status: active
  • Drain to Source Voltage (Vdss): 75V
  • Continuous Drain Current (Id): 150A @ 25°C
  • Applications: power supplies, motor control, and industrial automation systems

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $35.3788 $70.7576
4+ $29.0298 $116.1192
7+ $28.1219 $196.8533
9+ $27.2153 $244.9377
11+ $26.3074 $289.3814
15+ $23.5863 $353.7945
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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