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RJK0651DPB-00#J5

Part No RJK0651DPB-00#J5
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 25A LFPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Max Gate Charge 15nC @ 4.5V
Max Input Capacitance 2030pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 12.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 1092285-RJK0651DPB-00#J5
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RJK0651DPB-00#J5 CAD Model

Description

The Renesas Electronics America RJK0651DPB-00#J5 is an N-channel MOSFET that is designed for use in high-power applications.

  • Maximum power dissipation: 45W
  • Drain-source breakdown voltage: 60V
  • Feature: low gate charge
  • Package: LFPAK
  • Mounting: surface-mount applications
  • RoHS compliant: Yes
  • Popularity: medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5526 $54.3410
80+ $1.2740 $101.9200
125+ $1.2342 $154.2750
170+ $1.1944 $203.0480
220+ $1.1545 $253.9900
290+ $1.0351 $300.1790
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,380 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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