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Same model may have multiple batches, images only for reference.
RJK1055DPB-00#J5 Real Image
Same model may have multiple batches, images only for reference.

RJK1055DPB-00#J5

Part No RJK1055DPB-00#J5
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 23A LFPAK / Trans MOSFET N-CH Si 100V 23A 5-Pin(4+Tab) LFPAK T/R
Datasheet
RJK1055DPB-00#J5 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 23A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate Charge (Qg) (Maximum) @ Vgs 35nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2550pF @ 10V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 60W (Tc)
Rds On (Maximum) @ Id, Vgs 17 mOhm @ 11.5A, 10V
Operating Temperature Range 150°C (TJ)
Mounting SMD
Manufacturer Package LFPAK
Package SC-100, SOT-669
Win Source Part Number 793222-RJK1055DPB-00#J5
Popularity Medium
Supply and Demand Status Limited
Family Name RJK1055DPB-00
Introduction Date December 17, 2009
ECCN EAR99
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian RJK1055DPB-00#J5 CAD Model

Description

The RJK1055DPB-00#J5 from Renesas Electronics America is an N-channel MOSFET with a maximum continuous drain current of 23A @ 25°C.

  • Package: SC-100, SOT-669
  • Drain Source Voltage: 100V
  • Gate Charge: 35nC @ 10V
  • Power Dissipation (Maximum): 60W @ Tc
  • Rds On: 17 mOhm @ 11.5A, 10V
  • Application: discrete semiconductor

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