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Same model may have multiple batches, images only for reference.
RJK2075DPA-00#J5A Real Image
Same model may have multiple batches, images only for reference.

RJK2075DPA-00#J5A

Part No RJK2075DPA-00#J5A
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 20A WPAK(3F) / Trans MOSFET N-CH 200V 20A 8-Pin WPAK EP T/R
Datasheet
RJK2075DPA-00#J5A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 200V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate Charge (Qg) (Maximum) @ Vgs 38nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2200pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 65W (Ta)
Rds On (Maximum) @ Id, Vgs 69 mOhm @ 10A, 10V
Operating Temperature Range 150°C (TJ)
Mounting SMD
Manufacturer Package WPAK(3F) (5x6)
Package 8-PowerVDFN
Win Source Part Number 793225-RJK2075DPA-00#J5A
Popularity Medium
Supply and Demand Status Limited
Family Name RJK2075DPA-00
Introduction Date July 23, 2012
ECCN EAR99
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian RJK2075DPA-00#J5A CAD Model

Description

The RJK2075DPA-00 from Renesas is a MOSFET technology-based discrete semiconductor product with a drive voltage (Max Rds On, Min Rds On) of 10V.

  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drain Source Voltage: 200V
  • Channel Type: N
  • Input Capacitance (Ciss) (Maximum) @ Vds: 2200pF @ 25V
  • Gate Charge (Qg) (Maximum) @ Vgs: 38nC @ 10V
  • Power Dissipation (Maximum): 65W (Ta)
  • Rds On (Maximum) @ Id, Vgs: 69 mOhm @ 10A, 10V
  • Popularity: medium
  • Supply and Demand Status: limited
  • Estimated EOL Date: 2029

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