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RJK6026DPE-00#J3

Part No RJK6026DPE-00#J3
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 5A LDPAK / Trans MOSFET N-CH Si 600V 5A 3-Pin(2+Tab) LDPAK(S)-1 T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate Charge (Qg) (Maximum) @ Vgs 14nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 440pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 62.5W (Tc)
Rds On (Maximum) @ Id, Vgs 2.4 Ohm @ 2.5A, 10V
Operating Temperature Range 150°C (TJ)
Mounting SMD
Manufacturer Package 4-LDPAK
Package SC-83
Win Source Part Number 793232-RJK6026DPE-00#J3
Popularity Medium
Supply and Demand Status Balance
Family Name RJK6026DPE-00
ECCN EAR99
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian RJK6026DPE-00#J3 CAD Model

Description

The RJK6026DPE-00#J3 from Renesas Electronics America is a MOSFET transistor that is designed for use in discrete semiconductor products.

  • Power Dissipation (Maximum): 62.5W (Tc)
  • Continuous Drain Current: 5A (Ta) @ 25°C
  • Gate Charge (Qg): 14nC @ 10V
  • Input Capacitance (Ciss): 440pF @ 25V
  • Drain-Source Voltage: 600V
  • Rds On: 2.4 Ohm @ 2.5A, 10V
  • Operating Temperature Range: 150°C (TJ)
  • Package: SC-83
  • Mounting: SMD
  • Package: 4-LDPAK
  • Family: RJK6026DPE-00
  • Drive Voltage: 10V
  • Channel Type: N
  • Popularity: medium
  • Estimated EOL Date: 2022

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