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Same model may have multiple batches, images only for reference.
RJP60D0DPE-00#J3 Real Image
Same model may have multiple batches, images only for reference.

RJP60D0DPE-00#J3

Part No RJP60D0DPE-00#J3
Manufacturer Renesas Electronics America
Catalog IGBTs - Single
Description IGBT 600V 45A 122W LDPAK / Trans IGBT Chip N-CH 600V 45A 122000mW 3-Pin(2+Tab) LDPAK(S)-1 T/R
Datasheet
RJP60D0DPE-00#J3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel package
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 45A
Vce(on) (Maximum) @ Vge, Ic 2.2V @ 15V, 22A
Power - Max 122W
Input Type Standard
Gate Charge 45nC
Td (on/off) @ 25°C 35ns/90ns
Test Condition 300V, 22A, 5 Ohm, 15V
Operating Temperature Range 150°C (TJ)
Mounting SMD
Package SC-83
Manufacturer Package 4-LDPAK
Win Source Part Number 793237-RJP60D0DPE-00#J3
Popularity Medium
Supply and Demand Status Limited
Family Name RJP60D0DPE-00
Introduction Date November 15, 2010
ECCN EAR99
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian RJP60D0DPE-00#J3 CAD Model

Description

The RJP60D0DPE-00#J3 from Renesas Electronics America is a high-performance power transistor that can handle a maximum power of 122 watts.

  • Collector Current: 45A
  • Voltage Breakdown: 600V
  • Package: SC-83
  • Operating Temperature Range: 150°C
  • Gate Charge: 45nC
  • Td (on/off) @ 25°C: 35ns/90ns
  • Family Name: RJP60D0DPE-00
  • Category: Discrete Semiconductor Product

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