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Same model may have multiple batches, images only for reference.
UPA2521T1H-T1-AT Renesas Electronics America
Same model may have multiple batches, images only for reference.

UPA2521T1H-T1-AT

Part No UPA2521T1H-T1-AT
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8A 8VSOF / N-Channel 30 V 8A (Ta) 1W (Ta) Surface Mount 8-VSOF
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America Inc
Series -
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 8A (Ta)
Rds On (Max) @ Id, Vgs 16.5mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 7.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds 780 pF @ 15 V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-VSOF
Package / Case 8-SMD, Flat Lead
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1356322-UPA2521T1H-T1-AT
Ultra Librarian 3D Model Ultra Librarian UPA2521T1H-T1-AT CAD Model

Description

The 1170800 is a MOSFET (Metal Oxide) transistor designed for use in various electronic devices. Manufactured by Renesas Electronics America Inc

  • Type: N-Channel MOSFET
  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 8A
  • On-Resistance (Max): 16.5mOhm @ 8A and 10V gate-source voltage
  • Gate Charge (Qg): 7.6 nC @ 5V gate-source voltage
  • Maximum Temperature: 150°C
  • Status: Obsolete

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