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UPA2680T1E-E2-AT

Part No UPA2680T1E-E2-AT
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 3A 6MLP / N-Channel 20 V 3A (Ta) Surface Mount 6-MLP (3x3)
Sample
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Rds On (Max) @ Id, Vgs 50mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 10 V
FET Feature Schottky Diode (Isolated)
Mounting Type Surface Mount
Supplier Device Package 6-MLP (3x3)
Package / Case 6-VDFN Exposed Pad
Standard Package 3,000 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 902082-UPA2680T1E-E2-AT
Ultra Librarian 3D Model Ultra Librarian UPA2680T1E-E2-AT CAD Model

Description

The 902082-UPA2680T1E-E2-AT is a single N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) with a built-in Schottky diode from Renesas Electronics America.

  • Application: applications that require high voltage and current handling capabilities along with fast switching performance
  • Vdss: 20V
  • Id: 3A
  • Rds On (Max): 50mOhm @ 3A and 10V
  • Package: 6-VDFN exposed pad
  • Qg (Max): 3.1nC @ 4.5V
  • Operating Temperature: -40°C to 150°C
  • Status: obsolete
  • Applications: power management and motor control

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4897 $58.7640
290+ $0.4019 $116.5510
450+ $0.3892 $175.1400
615+ $0.3777 $232.2855
795+ $0.3650 $290.1750
1,065+ $0.3269 $348.1485
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,200 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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