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Same model may have multiple batches, images only for reference.
UPA2820T1S-E2-AT Real Image
Same model may have multiple batches, images only for reference.

UPA2820T1S-E2-AT

Part No UPA2820T1S-E2-AT
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8HVSON
Datasheet
UPA2820T1S-E2-AT Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Max Gate Charge 50nC @ 10V
Max Input Capacitance 2330pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta), 16W (Tc)
Maximum Rds On at Id,Vgs 5.3 mOhm @ 22A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Dimension 8-PowerWDFN
Win Source Part Number 1116520-UPA2820T1S-E2-AT
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UPA2820T1S-E2-AT CAD Model

Description

The Renesas Electronics America UPA2820T1S-E2-AT is a medium popularity electronic component product that is balanced in supply and demand.

  • Technology: MOSFET
  • Polarity: N-Channel
  • Mounting: SMD (SMT)
  • Win Source Part Number: 1116520-UPA2820T1S-E2-AT
  • Category: Discrete Semiconductor Products
  • Maximum Drain-Source Breakdown Voltage: 30V
  • Maximum Continuous Drain Current: 22A (Tc)

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