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Same model may have multiple batches, images only for reference.
UPA603T-T1-A
Same model may have multiple batches, images only for reference.

UPA603T-T1-A

Part No UPA603T-T1-A
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description Trans Mosfet P-ch 50V 0.1A 6-PIN SC-59 T/r
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SC
Continuous Drain Current (ID) 100 mA
Drain to Source Voltage (Vdss) 50 V
Fall Time 80 ns
Gate to Source Voltage (Vgs) 16 V
Input Capacitance 17 pF
Lead Free Yes
Maximum Operating Temperature 150 °C
Max Power Dissipation 300 mW
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Elements 2
Number of Pins 59
Power Dissipation 300 mW
Radiation Hardening No
Rds On Max 60 Ω
Rise Time 75 ns
RoHS Compliant
Turn-Off Delay Time 25 ns
Turn-On Delay Time 45 ns
Win Source Part Number 963607-UPA603T-T1-A
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Renesas Electronics America
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian UPA603T-T1-A CAD Model

Description

The Renesas Electronics America UPA603T-T1-A is a transistor-FET designed for RF MOSFETs.

  • Mounting Type: SMD (SMT)
  • Drain to Source Voltage (Vdss): 50V
  • Elements: Two
  • Input Capacitance: 17pF
  • Power Dissipation: 300mW
  • Pins: 59
  • Rise Time: 75ns
  • Fall Time: 80ns
  • Supply and Demand Status: Shortage
  • Maximum Operating Temperature: 150 °C
  • Lead-Free: Yes
  • RoHS Compliant: Yes
  • Radiation Hardening: No
  • Minimum Operating Temperature: -55 °C

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