The AM27C010-155DC, manufactured by Rochester Electronics, is a high-performance 1 Mbit (128K x 8) CMOS EPROM (Erasable Programmable Read-Only Memory). As a replacement or continuation part from AMD, it is designed for applications requiring non-volatile storage of firmware, code, or data. Due to it being an EPROM, the memory can be erased using ultraviolet light and reprogrammed, offering flexibility during development and production.

Applications

• Embedded Systems: Storage of boot code, operating systems, and application software.
• Industrial Control Systems: Storage of configuration parameters and control algorithms.
• Telecommunications Equipment: Storage of firmware for network devices.
• Instrumentation: Storage of calibration data and measurement routines.
• Legacy Systems: Replacement for obsolete EPROMs in older equipment.

Features

• High-Speed Access Time: Offers a typical access time of 155ns for fast data retrieval.
• UV Erasable: Memory can be erased via ultraviolet light exposure, allowing for reprogramming.
• Single 5V Power Supply: Operates on a single 5V power supply for ease of integration.
• CMOS Technology: Low power consumption compared to older NMOS EPROMs.
• JEDEC Standard Pinout: Compatible with industry-standard EPROM pinouts for easy replacement.

Benefits

• Flexibility: Erasure and reprogramming capabilities allow for firmware updates and design changes.
• Reliability: Non-volatile storage ensures data retention even when power is removed.
• Ease of Use: Single 5V power supply and standard pinout simplify system integration.
• Cost-Effective Solution: Provides a cost-effective solution for non-volatile memory requirements.
• Continued Availability: Rochester Electronics ensures continued availability of this EPROM, supporting legacy systems.

Technical Specifications

The AM27C010-155DC operates with a single 5V power supply. It has a maximum access time of 155ns. It is packaged in a 32-pin ceramic DIP (Dual In-Line Package) with a quartz window for UV erasure. The operating temperature range is typically 0°C to 70°C. It stores 1 Mbit of data, organized as 128K x 8 bits. The device uses CMOS technology for low power consumption. The device should be exposed to UV light with a wavelength of 253.7 nm for erasure. The erasure time depends on the UV lamp intensity and distance but generally takes around 20-30 minutes. Proper handling and storage are recommended to prevent electrostatic discharge (ESD) damage.