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2SC5824-R

Part No 2SC5824-R
Manufacturer Rohm Semiconductor
Catalog Electronic Wholesale
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 12Rohs
Reference case SOT89
Manufacturer Rohm Semiconductor
Manufacturer Homepage www.rohm.com
Win Source Part Number 751227-2SC5824-R
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SC5824-R CAD Model

Description

The 2SC5824-R is a silicon NPN epitaxial planar transistor manufactured by Rohm Semiconductor. This transistor is designed for high-frequency amplifier applications. The '-R' suffix likely designates a specific gain or performance binning. It is optimized for use in VHF and UHF bands.

Applications:

  • High-Frequency Amplifiers: Used in VHF/UHF communication systems.
  • Oscillators: Used in oscillator circuits for generating high-frequency signals.
  • Mixers: Functions as a mixer in frequency conversion circuits.
  • RF Front-Ends: Used in the front-end stages of radio receivers.
  • Test and Measurement Equipment: Suitable for use in high-frequency test equipment.

Features:

  • NPN Epitaxial Planar Transistor: Offers reliable and consistent performance.
  • High Transition Frequency (fT): Enables operation at high frequencies.
  • High Gain: Provides good signal amplification.
  • Low Noise Figure: Suitable for low-noise amplifier applications.
  • Small Package: Allows for compact circuit designs.

Benefits:

  • Efficient High-Frequency Operation: High transition frequency ensures optimal performance at VHF and UHF frequencies.
  • Increased Signal Strength: High gain boosts the signal level for improved processing.
  • Improved Receiver Sensitivity: Low noise figure enhances the ability to detect weak signals.
  • Compact Design: Small package minimizes board space requirements.
  • Reliable Performance: Rohm Semiconductor's quality ensures consistent and stable operation.

Additional Details:

The 2SC5824-R typically features a collector-emitter voltage (VCEO) of 12V, a collector current (IC) of 30mA, and a power dissipation (PC) of 200mW. Its transition frequency (fT) is typically around 8 GHz. The 'R' suffix likely denotes a specific gain range or other electrical characteristic binning; refer to the Rohm Semiconductor datasheet for precise specifications and application guidelines for this specific variant of the 2SC5824 transistor. The datasheet will provide information on the exact gain range, noise figure, and other relevant parameters for the 2SC5824-R.

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