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Same model may have multiple batches, images only for reference.
2SCR375P5T100Q Real Image
Same model may have multiple batches, images only for reference.

2SCR375P5T100Q

Part No 2SCR375P5T100Q
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description TRANS NPN 120V 1.5A MPT3  /  Bipolar (BJT) Transistor NPN 120 V 1.5 A 200MHz 500 mW Surface Mount MPT3
Datasheet
2SCR375P5T100Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Rohm Semiconductor
Package Tape & Reel
Transistor Type NPN
Current - Collector (Ic) (Max) 1.5 A
Voltage - Collector Emitter Breakdown (Max) 120 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 80mA, 800mA
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 200mA, 5V
Power - Max 500 mW
Frequency - Transition 200MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-243AA
Supplier Device Package MPT3
Base Product Number 2SCR375
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.21.0075
Other Names 2SCR375P5T100QTR,2SCR375P5T100QCT,2SCR375P5T100QDKR
Standard Package 1,000
Win Source Part Number 1037261-2SCR375P5T100Q
Ultra Librarian 3D Model Ultra Librarian 2SCR375P5T100Q CAD Model

Description

The 2SCR375P5T100Q is an NPN bipolar single transistor that has a maximum power of 500mW and a maximum voltage of collector-emitter breakdown of 120V.

  • Transistor Type: NPN Bipolar Single
  • Maximum Power: 500mW
  • Maximum Voltage Collector-Emitter Breakdown: 120V
  • Maximum Current Collector: 1.5A
  • Vce Saturation (Max): 300mV @ 80mA, 800mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
  • Frequency-Transition: 200MHz
  • Package: TO-243AA case/package
  • Supplier Device Package: MPT3
  • MSL Level: 1 (Unlimited)
  • REACH Status: REACH Affected
  • Manufacturer: Rohm Semiconductor
  • Also Known As: 2SCR375P5T100QTR, 2SCR375P5T100QCT, and 2SCR375P5T100QDKR

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