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2SD2144STPW

Part No 2SD2144STPW
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 20V 0.5A SPT
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging AMMO PACKAGE
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 20V
Max Vce (sat) 400mV @ 20mA, 500mA
Collector Cut-off Current(Max) 500nA (ICBO)
Typical Gain (hFE) (Min) 1200 @ 10mA, 3V
Maximum Power Dissipation 300mW
Frequency - Transition 350MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package SPT
Win Source Part Number 115927-2SD2144STPW
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SD2144STPW CAD Model

Description

The 2SD2144STPW is a high-performance NPN transistor built for applications demanding substantial current and power handling. It is widely recognized in the electronics industry for its ability to operate efficiently under high-stress conditions, making it a preferred choice in several advanced electronic projects.

Features and Benefits

  • High Power Output: Engineered to deliver high output power, suitable for demanding applications.
  • Low Saturation Voltage: Reduces power loss, thereby improving overall circuit efficiency.
  • Temperature Tolerance: Capable of maintaining performance across a wide temperature range.
  • Durable Build: Constructed for longevity, ensuring dependable operation over an extended period.

Applications

  • Industrial Drives: Used in motor controllers and other industrial drive applications.
  • Power Management: Ideal for power management systems and infrastructure.
  • RF Amplifiers: Suitable for use in radio frequency amplifier circuits.
  • Inverter Circuits: Utilized in creating efficient power inverter systems.

Additional Details

The 2SD2144STPW is tailored to meet the rigorous demands of industrial and commercial applications, where performance and reliability are non-negotiable. This transistor not only provides superior electrical characteristics but also boasts a robust physical design suited for long-lasting operation. Its implementation across varied design paradigms highlights its capability to deliver consistent results in challenging environments.

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