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Same model may have multiple batches, images only for reference.
EMB4T2R Real Image
Same model may have multiple batches, images only for reference.

EMB4T2R

Part No EMB4T2R
Manufacturer Rohm Semiconductor
Catalog RF Transistors (BJT)
Description TRANS 2PNP PREBIAS 0.15W EMT6 / Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr Rohm Semiconductor
Package Tape & Reel (TR)
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Frequency - Transition 250MHz
Power - Max 150mW
Mounting SMD (SMT)
Package / Case SOT-563, SOT-666
Supplier Device Package EMT6
Base Product Number EMB4T2
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names EMB4T2RCT,EMB4T2RDKR,EMB4T2RTR,EMB4T2R-ND
Standard Package 8,000
Win Source Part Number 1123546-EMB4T2R
Ultra Librarian 3D Model Ultra Librarian EMB4T2R CAD Model

Description

The EMB4T2R is a bipolar transistor array from Rohm Semiconductor.

  • Package: Tape & Reel
  • Power: 150mW
  • Voltage Breakdown: 50V
  • Maximum Collector Current: 100mA
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Frequency Transition: 250MHz
  • Current Gain (hFE): 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Package: SOT-563, SOT-666
  • ECCN: EAR99

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