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Same model may have multiple batches, images only for reference.
EMB6T2R Real Image
Same model may have multiple batches, images only for reference.

EMB6T2R

Part No EMB6T2R
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.15W EMT6
Datasheet
EMB6T2R Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 30mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 68 @ 5mA, 5V
Max Vce (sat) 300mV @ 500μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package EMT6
Win Source Part Number 1036303-EMB6T2R
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian EMB6T2R CAD Model

Description

The Rohm Semiconductor EMB6T2R is a dual pre-biased PNP transistor designed for use in a variety of electronic applications.

  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Collector Current: 30mA
  • Collector-Emitter Saturation Voltage: 300mV @ 500μA and 10mA
  • RoHS Compliant: Yes
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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