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Same model may have multiple batches, images only for reference.
ES6U41T2R Real Image
Same model may have multiple batches, images only for reference.

ES6U41T2R

Part No ES6U41T2R
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 1.5A WEMT6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 1mA
Max Gate Charge 2.2nC @ 4.5V
Max Input Capacitance 80pF @ 10V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 240 mOhm @ 1.5A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-WEMT
Dimension SOT-563, SOT-666
Win Source Part Number 1037043-ES6U41T2R
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian ES6U41T2R CAD Model

Description

The Rohm Semiconductor ES6U41T2R is an N-channel MOSFET with a Schottky diode and a drain-source breakdown voltage of 30V.

  • Maximum Power Dissipation: 700mW
  • Maximum Continuous Drain Current: 1.5A
  • Case Dimension: SOT-563 and SOT-666
  • Gate-Source Threshold Voltage: 1.5V @ 1mA
  • Maximum Gate Charge: 2.2nC @ 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
240+ $0.2446 $58.7040
580+ $0.2007 $116.4060
895+ $0.1944 $173.9880
1,230+ $0.1882 $231.4860
1,590+ $0.1820 $289.3800
2,125+ $0.1631 $346.5875
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,600 pieces
MOQ: 240 pcs
Order Increment : 1 pcs
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