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Same model may have multiple batches, images only for reference.
IMB1A Real Image
Same model may have multiple batches, images only for reference.

IMB1A

Part No IMB1A
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS DUAL PNP SMT6
Datasheet
IMB1A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 56 @ 5mA, 5V
Max Vce (sat) 300mV @ 500μA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SMT6
Win Source Part Number 205147-IMB1A
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IMB1A CAD Model

Description

The Rohm Semiconductor 205147-IMB1A is a PNP pre-biased dual transistor suitable for use in discrete semiconductor products.

  • Maximum Collector Current: 100 mA
  • Maximum Collector-Emitter Breakdown Voltage: 50 V
  • Collector Cut-off Current: 500 nA
  • Typical Gain: 56 @ 5 mA and 5 V
  • Package: SMT6 package
  • Maximum Power Dissipation: 300 mW

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $101.5118 $101.5118
2+ $98.3402 $196.6804
3+ $95.1674 $285.5022
4+ $91.9958 $367.9832
5+ $82.4786 $412.3930
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