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Same model may have multiple batches, images only for reference.
IMB9AT110 Rohm Semiconductor
Same model may have multiple batches, images only for reference.

IMB9AT110

Part No IMB9AT110
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS DUAL PNP SMT6
Datasheet
IMB9AT110 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 68 @ 5mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SMT6
Win Source Part Number 108638-IMB9AT110
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IMB9AT110 CAD Model

Description

The IMB9AT110 is a dual PNP pre-biased transistor manufactured by Rohm Semiconductor.

  • Transition Frequency: 250MHz
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Typical Gain: 68 @ 5mA, 5V
  • Maximum Collector Cut-off Current: 500nA
  • Maximum Power Dissipation: 300mW
  • Packaging: SMT6
  • Category: discrete semiconductor products
  • Market Status: open market
  • Supply and Demand Status: balanced

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Quantity Unit Price Ext. Price
320+ $0.1811 $57.9520
780+ $0.1487 $115.9860
1,205+ $0.1441 $173.6405
1,660+ $0.1394 $231.4040
2,145+ $0.1347 $288.9315
2,870+ $0.1208 $346.6960
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MOQ: 320 pcs
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