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IMH10AT110 Rohm Semiconductor IMH10AT110 real image IMH10AT110 label picture IMH10AT110 label picture 2
Same model may have multiple batches, images only for reference.
IMH10AT110 Rohm Semiconductor IMH10AT110 real image IMH10AT110 label picture IMH10AT110 label picture 2
IMH10AT110 Rohm Semiconductor IMH10AT110 real image IMH10AT110 label picture IMH10AT110 label picture 2
Same model may have multiple batches, images only for reference.

IMH10AT110

Part No IMH10AT110
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS DUAL NPN SMT6
Datasheet
IMH10AT110 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SMT6
Win Source Part Number 017244-IMH10AT110
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IMH10AT110 CAD Model

Description

The Rohm Semiconductor IMH10AT110 is a dual NPN pre-biased transistor with a collector-emitter breakdown voltage of 50V.

  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 100mA
  • Maximum Power Dissipation: 300mW
  • Typical Gain: 80 @ 10mA and 5V
  • Frequency Transition: 250MHz
  • Collector Cut-off Current: 500nA
  • Maximum Vce (sat): 300mV @ 250μA and 5mA
  • Resistor-Base: 2.2k
  • Resistor-Emitter Base: 47k

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Quantity Unit Price Ext. Price
565+ $0.1029 $58.1385
1,370+ $0.0845 $115.7650
2,120+ $0.0819 $173.6280
2,920+ $0.0792 $231.2640
3,775+ $0.0766 $289.1650
5,055+ $0.0686 $346.7730
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