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Same model may have multiple batches, images only for reference.
R8008ANJFRGTL Real Image
Same model may have multiple batches, images only for reference.

R8008ANJFRGTL

Part No R8008ANJFRGTL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 8A LPTS  /  N-Channel 800 V 8A (Tc) 195W (Tc) Surface Mount LPTS
Datasheet
R8008ANJFRGTL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.03Ohm @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 25 V
Power Dissipation (Max) 195W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package LPTS
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number R8008
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Other Names R8008ANJFRGTLDKR,R8008ANJFRGTLCT,R8008ANJFRGTLTR
Standard Package 1,000
Win Source Part Number 1002278-R8008ANJFRGTL
Ultra Librarian 3D Model Ultra Librarian R8008ANJFRGTL CAD Model

Description

The R8008ANJFRGTL is a high-performance N-channel MOSFET that is designed for use in a variety of applications from Rohm Semiconductor.

  • Gate Charge: 38 nC
  • Input Capacitance: 1100 pF
  • Maximum Power Dissipation: 195W
  • Package: TO-263AB

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.1384 $51.3840
24+ $4.2162 $101.1888
37+ $4.0844 $151.1228
51+ $3.9527 $201.5877
66+ $3.8209 $252.1794
88+ $3.4256 $301.4528
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Availability: 1,472 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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