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Same model may have multiple batches, images only for reference.
RDD022N50TL Real Image
Same model may have multiple batches, images only for reference.

RDD022N50TL

Part No RDD022N50TL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V CPT
Datasheet
RDD022N50TL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.7V @ 1mA
Max Gate Charge 6.7nC @ 10V
Max Input Capacitance 168pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 20W (Tc)
Maximum Rds On at Id,Vgs 5.4 Ohm @ 1A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package CPT3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 210712-RDD022N50TL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RDD022N50TL CAD Model

Description

The RDD022N50TL is a N-channel MOSFET manufactured by Rohm Semiconductor.

  • Maximum Power Dissipation: 20W (Tc)
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current @ 25°C: 2A (Tc)
  • Gate-Source Threshold Voltage: 4.7V @ 1mA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id,Vgs: 5.4 Ohm @ 1A, 10V
  • Case/Package: CPT3 case/package, which is a TO-252-3, DPak (2 Leads + Tab), SC-63
  • Use: discrete semiconductor products
  • Drive Voltage (max Rds On, min Rds On): 10V
  • Temperature Range: 150°C (TJ)
  • Recommendation: not recommended for new designs
  • Supply and demand status: balanced.

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