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Same model may have multiple batches, images only for reference.
RE1C002ZPTL Real Image
Same model may have multiple batches, images only for reference.

RE1C002ZPTL

Part No RE1C002ZPTL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 1.2V DRIVE PCH MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Gate-Source Threshold Voltage 1V @ 100μA
Max Gate Charge 1.4nC @ 4.5V
Max Input Capacitance 115pF @ 10V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 200mA, 4.5V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package EMT3F (SOT-416FL)
Dimension SC-89, SOT-490
Win Source Part Number 1091683-RE1C002ZPTL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RE1C002ZPTL CAD Model

Description

The RE1C002ZPTL is an active P-Channel MOSFET manufactured by Rohm Semiconductor.

  • Application: Discrete Semiconductor Products
  • Power Dissipation: 150W (Tc)
  • Drive Voltage: 4.5V
  • Operating Temperature: -40°C to 150°C (TJ)
  • Packaging: EMT3F (SOT-416FL)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 200mA (Ta)
  • Gate-Source Threshold Voltage: 1V @ 100μA
  • Maximum Gate Charge: 1.4nC @ 4.5V
  • Maximum Input Capacitance: 115pF @ 10V
  • Maximum Rds On @ Id,Vgs: 1.2 Ohm @ 200mA, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,015+ $0.0494 $50.1410
2,160+ $0.0463 $100.0080
3,360+ $0.0447 $150.1920
4,810+ $0.0416 $200.0960
6,250+ $0.0400 $250.0000
7,795+ $0.0385 $300.1075
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