The Rohm Semiconductor RF4E080BNTR is an N-channel MOSFET transistor that is designed to operate at a continuous drain current of 8A (Ta) and a drain-source voltage of 30V.

• Continuous Drain Current: 8A (Ta)
• Drain-Source Voltage: 30V
• Package: 6-HUML2020L8 (2x2)
• Mounting Type: SMD
• Gate-Source Threshold Voltage: 2V @ 250μA
• Maximum Gate-Source Voltage: ±20V
• Maximum Input Capacitance: 660pF @ 15V
• Maximum Gate Charge: 14.5nC @ 10V
• Maximum Power Dissipation: 2W (Ta)
• Maximum Rds On @ Id,Vgs: 17.6 mOhm @ 8A, 10V
• Application: Discrete semiconductor products