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Same model may have multiple batches, images only for reference.
RRH100P03GZETB Real Image
Same model may have multiple batches, images only for reference.

RRH100P03GZETB

Part No RRH100P03GZETB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 10A SOP8
Datasheet
RRH100P03GZETB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 68nC @ 10V
Max Input Capacitance 3600pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 650mW (Ta)
Maximum Rds On at Id,Vgs 12.6 mOhm @ 10A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1092662-RRH100P03GZETB
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RRH100P03GZETB CAD Model

Description

The Rohm Semiconductor RRH100P03GZETB is a P-Channel MOSFET.

  • Supply and Demand Status: Balanced
  • Case/Package: 8-SOP
  • Dimension: 8-SOIC (0.154", 3.90mm Width)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 10A (Ta)
  • Maximum Rds On @ Id,Vgs: 12.6 mOhm @ 10A, 10V
  • Temperature Range: 150°C (TJ)
  • Win Source Part Number: 1092662-RRH100P03GZETB

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