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RSJ10HN06TL

Part No RSJ10HN06TL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 100A LPTS
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 202nC @ 10V
Max Input Capacitance 11000pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 4.2 mOhm @ 50A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LPTS
Dimension SC-83
Win Source Part Number 1092791-RSJ10HN06TL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RSJ10HN06TL CAD Model

Description

The Rohm Semiconductor RSJ10HN06TL MOSFET is a high-quality discrete semiconductor product.

  • Manufacturer: Rohm Semiconductor
  • Channel Polarity: N-channel
  • Power Dissipation: 100W (Tc)
  • Packaging: Reel-TR LPTS package
  • Mounting Technology: SMD (SMT)
  • Product Status: Obsolete (EOL)
  • Temperature Range: 150°C (TJ)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 100A (Ta)
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Gate Charge: 202nC @ 10V
  • Maximum Input Capacitance: 11000pF @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 4.2 mOhm @ 50A, 10V
  • Product Family: Discrete semiconductor products
  • Win Source Part Number: 1092791-RSJ10HN06TL

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