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SCT3022ALGC11

Part No SCT3022ALGC11
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Package Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 93A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 28.6mOhm @ 36A, 18V
Vgs(th) (Max) @ Id 5.6V @ 18.2mA
Gate Charge (Qg) (Max) @ Vgs 133 nC @ 18 V
Vgs (Max) +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds 2208 pF @ 500 V
Power Dissipation (Max) 339W (Tc)
Temperature Range - Operating 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247N
Package / Case TO-247-3
Base Product Number SCT3022
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278194-SCT3022ALGC11
Ultra Librarian 3D Model Ultra Librarian SCT3022ALGC11 CAD Model

Description

The SCT3022ALGC11 is an N-channel SiCFET transistor from Rohm Semiconductor.

  • Maximum Drain-Source Voltage: 650V
  • Continuous Drain Current: 93A
  • Features: Low on-resistance and a high switching speed
  • Ideal for: high-power applications such as power supplies and motor drives
  • Package: TO-247-3
  • Mounting: through-hole

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $22.3847 $67.1541
7+ $18.3670 $128.5690
10+ $17.7930 $177.9300
14+ $17.2191 $241.0674
18+ $16.6451 $299.6118
24+ $14.9232 $358.1568
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,140 pieces
In Stock: 570 pieces Factory Stock: 570 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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