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SCT3030ARC14

Part No SCT3030ARC14
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Package Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 39mOhm @ 27A, 18V
Vgs(th) (Max) @ Id 5.6V @ 13.3mA
Gate Charge (Qg) (Max) @ Vgs 104 nC @ 18 V
Vgs (Max) +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds 1526 pF @ 500 V
Power Dissipation (Max) 262W
Temperature Range - Operating 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package / Case TO-247-4
Base Product Number SCT3030
Other Names 846-SCT3030ARC14,SCT3030ARC14
Standard Package 240
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278195-SCT3030ARC14
Ultra Librarian 3D Model Ultra Librarian SCT3030ARC14 CAD Model

Description

The SCT3030ARC14 is a SiCFET (Silicon Carbide) N-Channel FET transistor designed for use in Discrete Semiconductor Products such as Transistors - FETs, MOSFETs - Single.

  • Drain to Source Voltage (Vdss): 650 V
  • Continuous Drain Current (Id): 70A @ 25°C
  • Maximum Rds On: 39mOhm @ 27A and 18V
  • Gate Charge (Qg): 104 nC @ 18 V
  • Input Capacitance (Ciss): 1526 pF @ 500 V
  • Maximum Vgs: +22V and -4V
  • Temperature Range: 175°C (TJ)
  • Package Type: Through Hole
  • Package/Case: TO-247-4
  • Manufacturer: Rohm Semiconductor
  • Applications: Power supplies, motor drives, and inverters

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $64.3499 $64.3499
3+ $52.8001 $158.4003
4+ $51.1500 $204.6000
5+ $49.5000 $247.5000
7+ $47.8500 $334.9500
9+ $42.8999 $386.0991
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 276 pieces
Order Increment : 1 pcs
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