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SCT3060ALHRC11

Part No SCT3060ALHRC11
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Series Automotive, AEC-Q101
Package Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 78mOhm @ 13A, 18V
Vgs(th) (Max) @ Id 5.6V @ 6.67mA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 18 V
Vgs (Max) +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds 852 pF @ 500 V
Power Dissipation (Max) 165W
Temperature Range - Operating 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247N
Package / Case TO-247-3
Base Product Number SCT3060
Standard Package 30
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278187-SCT3060ALHRC11
Ultra Librarian 3D Model Ultra Librarian SCT3060ALHRC11 CAD Model

Description

The SCT3060ALHRC11 is an N-Channel SiCFET transistor from Rohm Semiconductor.

  • Series: Automotive, AEC-Q101
  • Drain to Source Voltage: 650 V
  • Continuous Drain Current: 39A @ 25°C
  • Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 6.67mA
  • Mounting: Through hole
  • Package: TO-247-3
  • Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V
  • Temperature Range: 175°C (TJ)
  • Power Dissipation (Max): 165W

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $28.1000 $56.2000
5+ $23.0564 $115.2820
7+ $22.3359 $156.3513
10+ $21.6154 $216.1540
12+ $20.8949 $250.7388
17+ $18.7333 $318.4661
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 568 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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