The SCT3080KRC14 is a discrete semiconductor product for transistors with FETs and MOSFETs from Rohm Semiconductor. It has a packaging of a tube and a standard package of 30.

• Mounting Technology: through-hole
• Technology: SiCFET (Silicon Carbide)
• FET Type: N-channel
• Drain to Source Voltage (Vdss): 1200V
• Continuous Drain Current (Id): 31A (Tc) @ 25°C
• Rds On (Max): 104mOhm @ 10A, 18V
• Vgs(th) (Max) @ Id: 5.6V @ 5mA
• Power Dissipation (Max): 165W
• Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18V
• Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800V
• Temperature Range: -55°C to 175°C (TJ)